1/4 2011.09 - rev.a rectifier diode RRE04EA4D applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification features 1)small mold type. (tsmd5) 2)high reliability. construction ? structure silicon epitaxial planer ? absolute maximum ratings (ta=25 c) symbol limits unit v rm 400 v v r 400 v tj 150 c tstg - 55 to + 150 c (*1) 1/2 x io at per diode ? electrical characteristics (tj=25 c) symbol min. typ. max. unit v f 0.95 1.1 v i r 0.01 1 a * per diode ? taping dimensions (unit : mm) parameter repetitive peak reverse voltage conditions forward current surge peak i fsm reverse voltage average rectified forward current (*1) io reverse current v r =400v forward voltage parameter junction temperature storage temperature i f =0.2a d 0.5 direct voltage glass epoxy substrate mounted r-road, 60hz half sin wave 60hz half sin wave, non-repetitive one cycle peak value, tj=25c 0.4 2 a a conditions rohm : tsmd5 tsmd5 3.20.08 4.00.1 4.00.1 2.00.05 1.550.05 3.50.05 1.750.1 8.00.2 1.10.08 3.20.08 1.10.1 3.20.08 0.30.1 00.5 5.50.2 dot (year week factory) 2.90.1 2.80.2 1.90.2 1.6 0.2 0.1 0.95 0.95 0.4 0.1 0.05 `??? 00.1 0.330.03 (1) (3) (5) (2) (4) 0.30.6 0.850.1 1.0max 0.70.1 0.160.1 0.06 each read has same dimensions data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RRE04EA4D 2/4 2011.09 - rev.a 0.001 0.01 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 forward voltage v f (v) v f -i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=75 c tj=150 c per diode 0.1 1 10 100 1000 0 100 200 300 400 tj=150 c tj=25 c tj=125 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics per diode 0.1 1 10 0 10 20 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics per diode 920 925 930 935 940 945 950 955 960 v f dispersion map forward voltage:v f (mv) ave:941mv tj=25 c i f =0.2a n=20pcs per diode 0.1 1 10 100 reverse current:i r (na) i r dispersion map tj=25 c v r =400v n=20pcs per diode ave:4.6na 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 ave:3.39pf tj=25 c f=1mhz v r =0v n=10pcs per diode capacitance between terminals:ct(pf) ct dispersion map www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RRE04EA4D 3/4 2011.09 - rev.a 0 1 2 3 4 5 6 7 8 9 10 ave:7.40a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) per diode 0.1 1 10 100 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics per diode 0.1 1 10 100 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics per diode 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 c=100pf r=1.5k c=200pf r=0 ave:4.58kv ave:6.84kv per diode electrostatic discharge test esd(kv) esd dispersion map 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j -c) rth(j - a) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) on glass - epoxy substrade 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 d.c. d=0.5 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RRE04EA4D 4/4 2011.09 - rev.a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 t tj=150 c d=t/t t v r io v r =200v 0a 0v on glass - epoxy substrate ambient temperature:ta( c) derating curve (io - ta) average rectified forward current:io(a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tc( c) derating curve (io -tc) t tj=150 c d=t/t t v r io v r =200v 0a 0v www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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